Qualcomm has announced its upcoming Snapdragon 835 chipset that will be powering next year’s flagship smartphones. The chipmaker has once again partnered Samsung to manufacture the SoC on the newest 10nm FinFET process. According to Qualcomm, the new fabrication process makes the chipset up to 30 percent more efficient while offering performance improvement of 27 percent. The process will also allow it to consume 40 percent less power compared to the existing chipsets. At the same time, the reduced footprint will also allow hardware manufacturers to make smaller components.
The current Snapdragon 820 and 821 SoC’s include Quick Charge 3.0 feature that can charge the smartphone battery up to 80 percent in just 35 minutes. The new Snapdragon 835 SoC brings Quick Charge 4.0 which Qualcomm claims is up to 20 percent faster than previous version. Qualcomm has a clever marketing slogan for Quick Charge 4.0: just five minutes of charging can deliver battery life of up to five hours or more.
“As mobile devices become more capable and feature rich, people tend to use them more. That’s why consumer demand and awareness for fast-charging solutions is now at an all-time high. Quick Charge 4 addresses that need by providing up to 50 percent battery charge in roughly 15 minutes or less, so you don’t have to spend all day chained to your charging cable,” said Alex Katouzian, senior vice president, product management, Qualcomm Technologies.
It also supports USB-C and USB Power Delivery standards which Google recently announced in the Android 7.0 Nougat documentation for unified charging across devices. This also means you will be able to fast charge the latest Pixel smartphones, last year’s Nexus smartphones and the MacBooks with USB Type-C ports using the Quick Charge 4 charger.
Quick Charge 4.0 also brings third generation Intelligent Negotiation for Optimum Voltage (INOV) for real-time thermal management. It is also capable of detecting the quality and type of charging cable to ensure the charger offers adequate power to the battery, while ensuring it doesn’t overload the circuits. Besides this, Qualcomm is also bringing two new ICs – the SMB1381 and the SMB1380. These ICs can offer peak efficiency of up to 95 percent along with low impedance and advanced fast charging features like battery differential sensing.
Samsung is also using the same process for making its own Exynos 8895 chipsets which could make its way on the Galaxy S8 smartphones sold in regions outside the US. The Snapdragon 835 chipset will be shipped to the manufacturers by end of 2016 and it is expected to make its way to smartphones in the first half of 2017. The HTC 10 successor, the LG G6, and the Samsung Galaxy S8 are some of the smartphones that are likely to be powered by Snapdragon 835 SoC.
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